Quantum electron lifetime in GaAs quantum wells with three populated subbands

Magneto infrared absorption in high electron density GaAs quantum wells.

Magneto infrared absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of the transverse optical phonon of GaAs. This unexpected result is explained by a model taking into...

optimization of electron raman scattering in double rectangular quantum wells

in this work, by using the particle swarm optimization the electron raman scattering for square double quantum wells is optimized. for this purpose, by combining the particle swarm algorithm together with the numerical solution procedures for equations, and also the perturbation theory we find the optimal structure that maximizes the electron raman scattering. application of this algorithm to t...

Photoluminescence Upconversion in GaAs Quantum Wells

We present a detailed experimental study of photoluminescence upconversion in GaAs quantum wells over a wide temperature range. The dependence of the upconversion on the well width is discussed and the conversion efficiency is determined as a function of laser detuning. The best results are achieved when the laser detuning is comparable to the thermal energy of the system, ∆E ≈ 2kBT .

InAs Quantum Dots in Symmetric InGaAs/GaAs Quantum Wells

The self-assembled InAs quantum dots (QDs) are the subject of substantial interest during last fifteen years due to both fundamental scientific and application reasons. In these systems, the strong localization of an electronic wave function leads to an atomic-like electronic density of states and permits to realize the novel and improved photonic and electronic devices. Microlectronic and opto...

Spin relaxation in GaAs(110) quantum wells